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High Hardness 9 Mohs Sapphire Ingot Excellent Temperature Resistance

Chongqing Silian Optoelectronic Science & Technology Co., Ltd.
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    Buy cheap High Hardness 9 Mohs Sapphire Ingot Excellent Temperature Resistance from wholesalers
     
    Buy cheap High Hardness 9 Mohs Sapphire Ingot Excellent Temperature Resistance from wholesalers
    • Buy cheap High Hardness 9 Mohs Sapphire Ingot Excellent Temperature Resistance from wholesalers
    • Buy cheap High Hardness 9 Mohs Sapphire Ingot Excellent Temperature Resistance from wholesalers
    • Buy cheap High Hardness 9 Mohs Sapphire Ingot Excellent Temperature Resistance from wholesalers

    High Hardness 9 Mohs Sapphire Ingot Excellent Temperature Resistance

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    Brand Name : SILIAN
    Model Number : Customized
    Certification : SGS/ ISO
    Price : Negotiable
    Payment Terms : T/T, Western Union, MoneyGram
    Supply Ability : 20,000 pcs/month
    Delivery Time : 5-8 weeks
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    High Hardness 9 Mohs Sapphire Ingot Excellent Temperature Resistance

    High temperature resistance, good thermal conductivity, high hardness, sapphire ingot


    Product Description


    Sapphire (Sapphire, molecular formula Al2O3) single crystal is an excellent multifunctional material. It has high temperature resistance, good thermal conductivity, high hardness, infrared transmission and good chemical stability. At the same time, it is also a widely used single crystal substrate material, and it is the substrate of choice for the current blue, violet, and white light emitting diode (LED) and blue laser (LD) industries.


    Technical Specification


    Crystal StructureHexagonal. a =4.758 c= 12.992
    Crystallographic D spacing(1120 ) - a plane: 2.379 (1102) - r plane: 1.740
    (1010) - m plane: 1.375 (1123) - n plane: 1.147 ˉ
    (0001) - c plane: 2.165 (1011) - s plane: 1.961
    Crystal Purity> 99.99%
    Melt Point2040 oC
    Density3.98 g/cm3
    Hardness9 ( mohs)
    Thermal Expansion7.5 (x10-6/ oC)
    Specific Heat0.10 ( cal / oC)
    Thermal Conductivity,46.06 @ 0 oC 25.12 @ 100 oC, 12.56 @ 400 oC ( W/(m.K) )
    Dielectric Constant~ 9.4 @300K at A axis ~ 11.58@ 300K at C axis
    Loss Tangent at 10 GHz< 2x10-5 at A axis , <5 x10-5 at C axis
    Standard Products
    As - grown boules3" dia x 50 ~ 70 mm length
    ori.± 0.5o2" dia x 50 ~ 70 mm length
    30 mm dia x 150 mm length
    As-cut blanks2" dia x 0.7 mm thickness
    ori.± 0.5o1" dia x 0.7 mm thickness
    Epi -polished substrates3" dia. x 0.5 mm
    C, R, A plane: ori.± 0.5o2" dia. x 0.33 mm, 2"dia x 0.5 mm
    1 or 2 sides polished1" dia x 0.5 mm
    Ra< 100.5" x 0.5" x 0.5 mm
    10x10x0.5 mm

    Application field


    In the field of optical communication, sapphire crystal is used not only as a short-wavelength active device, but also as a polarizer for passive devices;


    In the field of laser, sapphire is an excellent laser dielectric material (such as Ti:Al2O3, Cr:Al2O3);


    in the field of superconductivity, sapphire crystal can not only make Y-series, La-series high-temperature superconducting films, but also grow new practical MgB2 High-temperature superconducting thin films (usually single crystal substrates are chemically corroded during the production of MgB2 thin films);


    An important window material widely used in high-energy detection and high-power high-power lasers.


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