Sign In | Join Free | My himfr.com
Home > LED Sapphire Substrate >

No Cracking 6 Inch Sapphire Wafer With Good Light Transmittance

Chongqing Silian Optoelectronic Science & Technology Co., Ltd.
Contact Now
    Buy cheap No Cracking 6 Inch Sapphire Wafer With Good Light Transmittance from wholesalers
     
    Buy cheap No Cracking 6 Inch Sapphire Wafer With Good Light Transmittance from wholesalers
    • Buy cheap No Cracking 6 Inch Sapphire Wafer With Good Light Transmittance from wholesalers
    • Buy cheap No Cracking 6 Inch Sapphire Wafer With Good Light Transmittance from wholesalers
    • Buy cheap No Cracking 6 Inch Sapphire Wafer With Good Light Transmittance from wholesalers
    • Buy cheap No Cracking 6 Inch Sapphire Wafer With Good Light Transmittance from wholesalers

    No Cracking 6 Inch Sapphire Wafer With Good Light Transmittance

    Ask Lasest Price
    Brand Name : Silian
    Model Number : Customized
    Certification : SGS/ ISO
    Price : Negotiable
    Payment Terms : Western Union, T/T, MoneyGram
    Supply Ability : 20,000 pcs/month
    Delivery Time : 5-8 weeks
    • Product Details
    • Company Profile

    No Cracking 6 Inch Sapphire Wafer With Good Light Transmittance

    6-inch sapphire substrate with good light transmittance


    Product Description


    The chemical composition of sapphire crystal is alumina, with the crystal structure hexagonal lattice. Sapphire is a commonly used substrate material for gallium nitride (GaN) epitaxial growth. It has ultra-high hardness, stable physical and chemical properties at high temperatures, excellent optical performance.


    Technical Specification


    PropertiesUnit6 inch substrate
    Diametermm150.1±0.1
    Flat Lengthmm47.5±1
    MaterialHigh Purity and Monocrystalline AL2O3
    Surface Crystal OrientationC-Plane 0°±0.1°
    Primary Flat OrientationA-plane 0°±0.5°
    Broke Edge≤3mm
    CrackNo Cracking
    DefectNo Wrappage,Twin Crystal or Crystal Boundary
    EPD<1000/cm²

    Performance research


    The semi-polar and non-polar GaN can be grown on the sapphire substrate with some special planes like M-plane <1-100>and R-plane <1-102>. The semi-polar and non-polar GaN have good performance to improve the device droop effect, wavelength shift phenomenon and long wavelength band efficiency of LED device. Studies have shown that using the high-temperature AlN nucleation layer and the higher AlGaN growth temperature, or a buffer layer with the multilayer AlGaN, or using Si doping technique can effectively improve the crystal quality and the dislocation density of semi-polar and non-polar AlGaN thin films grown on sapphire substrates.



    Quality No Cracking 6 Inch Sapphire Wafer With Good Light Transmittance for sale
    Inquiry Cart 0
    Send your message to this supplier
     
    *From:
    *To: Chongqing Silian Optoelectronic Science & Technology Co., Ltd.
    *Subject:
    *Message:
    Characters Remaining: (0/3000)