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100mm 4 Inch Single Crystal Sapphire Wafer High Mechanical Strength

Chongqing Silian Optoelectronic Science & Technology Co., Ltd.
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    Buy cheap 100mm 4 Inch Single Crystal Sapphire Wafer High Mechanical Strength from wholesalers
     
    Buy cheap 100mm 4 Inch Single Crystal Sapphire Wafer High Mechanical Strength from wholesalers
    • Buy cheap 100mm 4 Inch Single Crystal Sapphire Wafer High Mechanical Strength from wholesalers
    • Buy cheap 100mm 4 Inch Single Crystal Sapphire Wafer High Mechanical Strength from wholesalers
    • Buy cheap 100mm 4 Inch Single Crystal Sapphire Wafer High Mechanical Strength from wholesalers

    100mm 4 Inch Single Crystal Sapphire Wafer High Mechanical Strength

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    Brand Name : Silian
    Model Number : Customized
    Certification : SGS/ ISO
    Price : Negotiable
    Payment Terms : Western Union, T/T, MoneyGram
    Supply Ability : 20,000 pcs/month
    Delivery Time : 5-8 weeks
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    100mm 4 Inch Single Crystal Sapphire Wafer High Mechanical Strength

    4 Inch Sapphire Substrate Is Widely Used


    Product Description

    The epitaxial layers of GaN-based materials and devices are mainly grown on sapphire substrates. Sapphire substrate has many advantages: firstly, the production technology of sapphire substrate is mature and the device quality is good; secondly, sapphire is very stable and can be used in the high-temperature growth process; finally, sapphire has high mechanical strength and is easy to handle And cleaning. Therefore, most processes generally use sapphire as the substrate.


    Technical Specification


    Item4"Unit
    DimensionDiameter:100 ± 0.15mm
    Thickness:650 ± 20um
    Primary Flat:30+1.0mm
    OrientationSurface-cut:C plane : Tilt 0.2°±0.1° in M axis /~
    Primary Flat:A plane : 0° ± 0.15°~
    FlatnessBow:0 ~ (-10)um
    Warp:≤ 20um
    Total Thickness Variation (TTV):≤ 10um
    LTV≤2.5um
    Front side Roughness≤0.2nm
    Back side Roughness0.8-1.2um
    CleanlinessNo particles and fingerprints~
    4.Material QualityHigh-purity mono-crystal Al2O3~
    5.PackageWafers are packed in cleaned wafer cassettes containing 25 wafers under clean room environment.~
    6.Trace AbilityWafers shall be traceable with respect to cassette number. The wafer box should be marked with a removable label showing the date, the cassette number and the quantity.~
    7.Laser MarkFront or Back side~

    Working principle


    The working principle of the LED is that in the case of forward conduction, the electrons and holes injected into the P/N section of the diode meet and recombine, and the potential energy is converted into light energy. The wavelength of the emitted photons (that is, the color of light) is determined by the energy band width of the semiconductor. The current blue and green LED devices are based on group III nitride semiconductors, which is mainly GaN, and InNAlN is the supplementary four. Yuan AlGaInN alloy system.

    To epitaxially grow a GaN film on a sapphire substrate, firstly a two-step epitaxial GaN buffer layer on the substrate (low-temperature epitaxial GaN nucleation layer, then high-temperature epitaxial u-GaN buffer layer); the second step is to grow Si-doped n-GaN The third step is to grow a multifunctional quantum well to provide a radiation recombination center, allowing electrons and holes to recombine and emit light; the fourth step to grow a Mg-doped p-GaN layer to provide hole injection. Normally, the LED structure is as shown in the picture.



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